1. 2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. (4th November 2019) Authors: Irekti, Mohamed-Reda; Lesecq, Marie; Defrance, Nicolas; Okada, Etienne; Frayssinet, Eric; Cordier, Yvon; Tartarin, Jean-Guy; De Jaeger, Jean-Claude Journal: Semiconductor science and technology Issue: Volume 34:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Design of tunable power detector towards 5G applications. Issue 3 (7th October 2020) Authors: Alaji, Issa; Aouimeur, Walid; Ghanem, Haitham; Okada, Etienne; Lépilliet, Sylvie; Gloria, Daniel; Ducournau, Guillaume; Gaquière, Christophe Journal: Microwave and optical technology letters Issue: Volume 63:Issue 3(2021) Page Start: 823 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Design of zero bias power detectors towards power consumption optimization in 5G devices. (May 2021) Authors: Alaji, Issa; Aouimeur, Walid; Ghanem, Haitham; Okada, Etienne; Lépilliet, Sylvie; Gloria, Daniel; Ducournau, Guillaume; Gaquière, Christophe Journal: Microelectronics journal Issue: Volume 111(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer. Issue 9 (28th May 2021) Authors: Abou Daher, Mahmoud; Lesecq, Marie; Defrance, Nicolas; Okada, Etienne; Boudart, Bertrand; Guhel, Yannick; Tartarin, Jean Guy; de Jaeger, Jean Claude Journal: Microwave and optical technology letters Issue: Volume 63:Issue 9(2021) Page Start: 2376 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High power, high PAE Q‐band sub‐10 nm barrier thickness AlN/GaN HEMTs. Issue 8 (15th May 2017) Authors: Dogmus, Ezgi; Kabouche, Riad; Linge, Astrid; Okada, Etienne; Zegaoui, Malek; Medjdoub, Farid Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances. (1st November 2022) Authors: Harrouche, Kathia; Venkatachalam, Srisaran; Grandpierron, François; Okada, Etienne; Medjdoub, Farid Journal: Applied physics express Issue: Volume 15:Number 11(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Large-area femtosecond laser milling of silicon employing trench analysis. (June 2021) Authors: Bhaskar, Arun; Philippe, Justine; Braud, Flavie; Okada, Etienne; Avramovic, Vanessa; Robillard, Jean-François; Durand, Cédric; Gloria, Daniel; Gaquière, Christophe; Dubois, Emmanuel Journal: Optics & laser technology Issue: Volume 138(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. (August 2021) Authors: Gao, ZHan; Meneghini, Matteo; Harrouche, Kathia; Kabouche, Riad; Chiocchetta, Francesca; Okada, Etienne; Rampazzo, Fabiana; De Santi, Carlo; Medjdoub, Farid; Meneghesso, Gaudenzio; Zanoni, Enrico Journal: Microelectronics and reliability Issue: Volume 123(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Temperature compensated power detector towards power consumption optimization in 5G devices. (February 2022) Authors: Alaji, Issa; Okada, Etienne; Gloria, Daniel; Ducournau, Guillaume; Gaquière, Christophe Journal: Microelectronics journal Issue: Volume 120(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗