1. Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness. (16th January 2017) Authors: Kim, Jungsik; Oh, Hyeongwan; Kim, Jiwon; Meyyappan, M.; Lee, Jeong-Soo Journal: Japanese journal of applied physics Issue: Volume 56:Number 2(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Three-dimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub-40 nm polysilicon nanowire FETs. (16th July 2015) Authors: Kim, Jungsik; Oh, Hyeongwan; Lee, Junyoung; Baek, Chang-Ki; Meyyappan, M; Lee, Jeong-Soo Journal: Semiconductor science and technology Issue: Volume 30:Number 8(2015:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon–oxide–nitride–oxide–silicon NAND flash memory. (23rd March 2018) Authors: Oh, Hyeongwan; Kim, Jiwon; Baek, Rock-Hyun; Lee, Jeong-Soo Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗