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Author/Creator Nyns, L.

1. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. Issue 49 (23rd May 2016)

Authors:
Franco, J.; Kaczer, B.; Vais, A.; Alian, A.; Arimura, H.; Putcha, V.; Sioncke, S.; Waldron, N.; Zhou, D.; Nyns, L.; Mitard, J.; Witters, L.; Heyns, M.; Groeseneken, G.; Collaert, N.; Linten, D.; Thean, A.
Journal:
MRS advances
Issue:
Volume 1:Issue 49(2016)
Page Start:
3329
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy. (1st January 2016)

Authors:
Madia, O.; Afanas'ev, V. V.; Cott, D.; Arimura, H.; Schulte-Braucks, C.; Lin, H. C.; Buca, D.; Driesch, N. Von Den; Nyns, L.; Ivanov, T.; Cuypers, D.; Stesmans, A.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 5:Number 4(2016)
Page Start:
P3031
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy. (24th November 2015)

Authors:
Madia, O.; Afanas'ev, V. V.; Cott, D.; Arimura, H.; Schulte-Braucks, C.; Lin, H. C.; Buca, D.; Driesch, N. Von Den; Nyns, L.; Ivanov, T.; Cuypers, D.; Stesmans, A.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 5:Number 4(2016)
Page Start:
P3031
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗