1. Normally‐off GaN MOSFETs with high‐k dielectric CeO2 films deposited by RF sputtering. Issue 2 (20th January 2014) Authors: Ogawa, Hiroki; Okazaki, Takuya; Kasai, Hayao; Hara, Kenta; Notani, Yuki; Yamamoto, Yasuhiro; Nakamura, Tohru Journal: Physica status solidi Issue: Volume 11:Issue 2(2014:Feb.) Page Start: 302 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗