1. Comparative study on nano‐scale III‐V double‐gate MOSFETs with various channel materials. Issue 11 (24th October 2013) Authors: Nishida, Akio; Hasegawa, Kei; Ohama, Ryoko; Fujikawa, Sachie; Hara, Shinsuke; Fujishiro, Hiroki I.; Yamaguchi, Hiroshi; Kumakura, Kazuhide Journal: Physica status solidi Issue: Volume 10:Issue 11(2013:Nov.) Page Start: 1413 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements. (5th January 2016) Authors: Shimizu, Yasuo; Takamizawa, Hisashi; Inoue, Koji; Yano, Fumiko; Kudo, Shuichi; Nishida, Akio; Toyama, Takeshi; Nagai, Yasuyoshi Journal: Japanese journal of applied physics Issue: Volume 55:Number 2(2016:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗