1. 50 nm AlxOy ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset. (January 2015) Authors: Ning, Sheyang; Iwasaki, Tomoko Ogura; Takeuchi, Ken Journal: Solid-state electronics Issue: Volume 103(2015) Page Start: 64 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Array-level stability enhancement of 50 nm AlxOy ReRAM. (December 2015) Authors: Iwasaki, Tomoko Ogura; Ning, Sheyang; Yamazawa, Hiroki; Takeuchi, Ken Journal: Solid-state electronics Issue: Volume 114(2015) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Array-level stability enhancement of 50 nm AlxOy ReRAM. (December 2015) Authors: Iwasaki, Tomoko Ogura; Ning, Sheyang; Yamazawa, Hiroki; Takeuchi, Ken Journal: Solid-state electronics Issue: Volume 114(2015) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Carbon nanotube memory cell array program error analysis and tradeoff between reset voltage and verify pulses. (24th February 2016) Authors: Ning, Sheyang; Iwasaki, Tomoko Ogura; Hachiya, Shogo; Rosendale, Glen; Manning, Monte; Viviani, Darlene; Rueckes, Thomas; Takeuchi, Ken Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗