1. A dielectrically modulated electrically doped tunnel FET for application of label free biosensor. (September 2017) Authors: Venkatesh, Pulimamidi; Nigam, Kaushal; Pandey, Sunil; Sharma, Dheeraj; Kondekar, P.N. Journal: Superlattices and microstructures Issue: Volume 109(2017) Page Start: 470 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A new approach for design and investigation of junction-less tunnel FET using electrically doped mechanism. (October 2016) Authors: Nigam, Kaushal; Kondekar, Pravin; Sharma, Dheeraj; Raad, Bhagwan Ram Journal: Superlattices and microstructures Issue: Volume 98(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering. (1st August 2016) Authors: Nigam, Kaushal; kondekar, Pravin; Sharma, Dheeraj Journal: Micro & nano letters Issue: Volume 11:Number 8(2016) Page Start: 460 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Approach on electrically doped TFET for suppression of ambipolar and improving RF performance. Issue 6 (18th July 2019) Authors: Venkata Chandan, Bandi; Nigam, Kaushal; Sharma, Dheeraj Journal: IET circuits, devices & systems Issue: Volume 13:Issue 6(2019) Page Start: 787 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Approach to suppress the ambipolar current conduction and improve radiofrequency performance in polarity control electrically doped hetero TFET. (4th September 2019) Authors: Chandan, Bandi Venkata; Nigam, Kaushal; Kondekar, Pravin; Sharma, Dheeraj Journal: Micro & nano letters Issue: Volume 14:Number 10(2019) Page Start: 1033 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET. Issue 5 (4th May 2018) Authors: Nigam, Kaushal; Gupta, Sarthak; Pandey, Sunil; Kondekar, P N; Sharma, Dheeraj Journal: International journal of electronics Issue: Volume 105:Issue 5(2018) Page Start: 806 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. DC and analog/RF performance optimisation of source pocket dual work function TFET. Issue 12 (2nd December 2017) Authors: Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar Journal: International journal of electronics Issue: Volume 104:Issue 12(2017) Page Start: 1992 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor. (April 2016) Authors: Nigam, Kaushal; Kondekar, Pravin; Sharma, Dheeraj Journal: Superlattices and microstructures Issue: Volume 92(2016) Page Start: 224 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Effect of ITC's on linearity and distortion performance of Junctionless tunnel field effect transistor. (November 2017) Authors: Awadhiya, Bhaskar; Pandey, Sunil; Nigam, Kaushal; Kondekar, Pravin N. Journal: Superlattices and microstructures Issue: Volume 111(2017) Page Start: 293 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Effect of ITCs on gate stacked JL‐TFET based on work‐function engineering. (23rd October 2019) Authors: Bhardwaj, Eshaan; Nigam, Kaushal; Choubey, Shubham; Chaturvedi, Savitesh Journal: Micro & nano letters Issue: Volume 14:Number 12(2019) Page Start: 1238 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗