1. A review of selective area grown recess structure for insulated-gate E-mode GaN transistors. (25th November 2019) Authors: He, Liang; Yang, Fan; Yao, Yao; Zheng, Yue; Zhang, Jialin; Li, Liuan; He, Zhiyuan; Ni, Yiqiang; Gu, Xin; Liu, Yang Journal: Japanese journal of applied physics Issue: Volume 59:Number SA(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate. (August 2018) Authors: Ni, Yiqiang; Li, Liuan; He, Liang; Que, Taotao; Liu, Zhenxing; He, Lei; Wu, Zhisheng; Liu, Yang Journal: Superlattices and microstructures Issue: Volume 120(2018) Page Start: 720 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate. (21st September 2015) Authors: Ni, Yiqiang; Zhou, Deqiu; Chen, Zijun; Zheng, Yue; He, Zhiyuan; Yang, Fan; Yao, Yao; Zhou, Guilin; Shen, Zhen; Zhong, Jian; Wu, Zhisheng; Zhang, Baijun; Liu, Yang Journal: Semiconductor science and technology Issue: Volume 30:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate. (October 2015) Authors: Ni, Yiqiang; Zhou, Deqiu; Chen, Zijun; Zheng, Yue; He, Zhiyuan; Yang, Fan; Yao, Yao; Zhou, Guilin; Shen, Zhen; Zhong, Jian; Wu, Zhisheng; Zhang, Baijun; Liu, Yang Journal: Semiconductor science and technology Issue: Volume 30:Number 10(2015:Oct.) Page Start: 1151 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis. Issue 5 (29th January 2016) Authors: Zhou, Deqiu; Ni, Yiqiang; He, Zhiyuan; Yang, Fan; Yao, Yao; Shen, Zhen; Zhong, Jian; Zhou, Guilin; Zheng, Yue; He, Liang; Wu, Zhisheng; Zhang, Baijun; Liu, Yang Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor. Journal: Physica status solidi Issue: Volume 13:Issue 5/6(2016:May) Page Start: 345 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Investigation of O3‐Al2O3/H2O‐Al2O3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors. Issue 10 (20th May 2016) Authors: Shen, Zhen; He, Liang; Zhou, Guilin; Yao, Yao; Yang, Fan; Ni, Yiqiang; Zheng, Yue; Zhou, Deqiu; Ao, Jinping; Zhang, Baijun; Liu, Yang Journal: Physica status solidi Issue: Volume 213:Issue 10(2016:Oct.) Page Start: 2693 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Quasi-vertical diamond temperature sensor by using Schottky–pn junction structure diode. (December 2022) Authors: Xie, Wenliang; He, Liang; Ni, Yiqiang; Li, Genzhuang; Wang, Qiliang; Cheng, Shaoheng; Li, Liuan Journal: Materials science in semiconductor processing Issue: Volume 152(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (1 1 1) template. (July 2015) Authors: Ni, Yiqiang; He, Zhiyuan; Zhou, Deqiu; Yao, Yao; Yang, Fan; Zhou, Guilin; Shen, Zhen; Zhong, Jian; Zhen, Yue; Zhang, Baijun; Liu, Yang Journal: Superlattices and microstructures Issue: Volume 83(2015) Page Start: 811 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗