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2. 2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics. (10th August 2021)

4. Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next‐generation label‐free biosensor. (25th August 2022)

6. Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology. (1st March 2022)