1. A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Issue 7 (29th December 2019) Authors: Remesh, Nayana; Kumar, Sandeep; Guiney, Ivor; Humphreys, Colin J.; Raghavan, Srinivasan; Muralidharan, Rangarajan; Nath, Digbijoy N. Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition. Issue 58 (17th November 2021) Authors: Mohta, Neha; Rao, Ankit; Remesh, Nayana; Muralidharan, R.; Nath, Digbijoy N. Journal: RSC advances Issue: Volume 11:Issue 58(2021) Page Start: 36901 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics. Issue 19 (12th October 2020) Authors: Mohta, Neha; Mech, Roop K.; Sanjay, Sooraj; Muralidharan, R.; Nath, Digbijoy N. Journal: Physica status solidi Issue: Volume 217:Issue 19(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics. Issue 19 (5th August 2020) Authors: Mohta, Neha; Mech, Roop K.; Sanjay, Sooraj; Muralidharan, R.; Nath, Digbijoy N. Journal: Physica status solidi Issue: Volume 217:Issue 19(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors. Issue 2 (21st December 2017) Authors: Singh, Vikash K.; Nath, Digbijoy N. Journal: Physica status solidi Issue: Volume 215:Issue 2(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector. (27th April 2018) Authors: Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N. Journal: Applied physics express Issue: Volume 11:Number 6(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. (22nd May 2018) Authors: Pratiyush, Anamika Singh; Krishnamoorthy, Sriram; Kumar, Sandeep; Xia, Zhanbo; Muralidharan, Rangarajan; Rajan, Siddharth; Nath, Digbijoy N. Journal: Japanese journal of applied physics Issue: Volume 57:Number 6(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3. Issue 5 (14th January 2020) Authors: Mech, Roop K.; Mohta, Neha; Chatterjee, Avijit; Selvaraja, Shankar Kumar; Muralidharan, Rangarajan; Nath, Digbijoy N. Journal: Physica status solidi Issue: Volume 217:Issue 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si. (November 2017) Authors: Kumar, Sandeep; Remesh, Nayana; Dolmanan, S.B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, Digbijoy N. Journal: Solid-state electronics Issue: Volume 137(2017) Page Start: 117 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. (December 2021) Authors: Subhani, Khawaja Nizammuddin; Remesh, Nayana; S, Niranjan; Raghavan, Srinivasan; R, Muralidharan; Nath, Digbijoy N.; Bhat, K.N. Journal: Solid-state electronics Issue: Volume 186(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗