Author/Creator: Nam, Jae Hyeon - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Nam, Jae Hyeon

1. Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects. (12th February 2019)

Authors:: Park, Woojin; Kim, Tae Hyeon; Nam, Jae Hyeon; Jang, Hye Yeon; Pak, Yusin; Min, Jung-Wook; Yun, Joho; Cho, Byungjin
Journal:: Nanotechnology
Issue:: Volume 30:Number 15(2019)
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Record Type:: Journal Article
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2. Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021). (1st October 2021)

Authors:: Nam, Jae Hyeon; Oh, Seyoung; Jang, Hye Yeon; Kwon, Ojun; Park, Heejeong; Park, Woojin; Kwon, Jung‐Dae; Kim, Yonghun; Cho, Byungjin
Journal:: Advanced functional materials
Issue:: Volume 31:Number 40(2021)
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Record Type:: Journal Article
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3. Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity. (23rd June 2021)

Authors:: Nam, Jae Hyeon; Oh, Seyoung; Jang, Hye Yeon; Kwon, Ojun; Park, Heejeong; Park, Woojin; Kwon, Jung‐Dae; Kim, Yonghun; Cho, Byungjin
Journal:: Advanced functional materials
Issue:: Volume 31:Number 40(2021)
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Record Type:: Journal Article
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4. One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector. (13th March 2020)

Authors:: Jang, Hye Yeon; Nam, Jae Hyeon; Yoon, Jongwon; Kim, Yonghun; Park, Woojin; Cho, Byungjin
Journal:: Nanotechnology
Issue:: Volume 31:Number 22(2020)
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Record Type:: Journal Article
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5. Unveiling the Role of Al2O3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors. Issue 6 (15th January 2021)

Authors:: Kim, Tae Hyeon; Park, Woojin; Oh, Seyoung; Kim, So-Young; Yamada, Naohito; Kobayashi, Hikaru; Jang, Hye Yeon; Nam, Jae Hyeon; Habazaki, Hiroki; Lee, Byoung Hun; Cho, Byungjin
Journal:: Physica status solidi
Issue:: Volume 218:Issue 6(2021)
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Record Type:: Journal Article
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