One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector. (13th March 2020)

• Record Type: Journal Article
• Authors: Jang, Hye Yeon; Nam, Jae Hyeon; Yoon, Jongwon; Kim, Yonghun; Park, Woojin; Cho, Byungjin
• Is Part Of: Nanotechnology. Volume 31:Number 22(2020)
• Publication Date: 2020-03-13
• Subjects: H2S gas, reactive sputtering -- heterojunction photodiode -- two-dimensional layered MoS2; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab7606
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2 S gas molecules and sequential in situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS2 and then applied to a 2D MoS2 /p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV–visible spectroscopy analysis of the as-deposited Ar/H2 S MoS2 film were performed, indicating that the stoichiometry and quality of the as-deposited MoS2 can be further improved compared with the Ar-only MoS2 sputtering method. For example, Ar/H2 S MoS2 photodiode has lower defect densities than that of Ar MoS2 . We also determined that the factors affecting photodetector performance can be optimised in the 8–12 nm deposited thickness range.