1. Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer. (31st August 2016) Authors: Hayashi, Takafumi; Nagata, Noriaki; Senga, Takashi; Iwayama, Sho; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Matsumoto, Takahiro Journal: Applied physics express Issue: Volume 9:Number 10(2016:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiNx intermediate layer. Issue 8 (13th December 2016) Authors: Nagata, Noriaki; Senga, Takashi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Physica status solidi Issue: Volume 14:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Retraction: "Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer". (4th November 2016) Authors: Hayashi, Takafumi; Nagata, Noriaki; Senga, Takashi; Iwayama, Sho; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Matsumoto, Takahiro Journal: Applied physics express Issue: Volume 9:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗