Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer. (31st August 2016)

• Record Type: Journal Article
• Authors: Hayashi, Takafumi; Nagata, Noriaki; Senga, Takashi; Iwayama, Sho; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Matsumoto, Takahiro
• Is Part Of: Applied physics express. Volume 9:Number 10(2016:Oct.)
• Publication Date: 2016-08-31
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.101001
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: In this study, an electron beam excitation laser using a GaInN-based multiquantum well (MQW) active layer was investigated, and laser emission was observed for the first time from a GaInN-based MQW excited by an electron beam. This technology has the potential to provide access to an expanded wavelength region for the laser action of nitride-semiconductor-based lasers from deep UV to infrared.