1. An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD. (26th April 2017) Authors: Ji, Shiyang; Kosugi, Ryoji; Kojima, Kazutoshi; Mochizuki, Kazuhiro; Saito, Shingo; Nagata, Akiyo; Matsukawa, Yasuko; Yonezawa, Yoshiyuki; Yoshida, Sadafumi; Okumura, Hajime Journal: Applied physics express Issue: Volume 10:Number 5(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗