1. Bengt Gunnar Svensson 12.09.1953–24.07.2018. Issue 10 (23rd May 2019) Authors: Monakhov, Eduard; Vines, Lasse; Johansen, Klaus Magnus; Kuznetsov, Andrej Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cells. Issue 10 (5th October 2018) Authors: Morisset, Audrey; Cabal, Raphaël; Grange, Bernadette; Marchat, Clément; Alvarez, José; Gueunier‐Farret, Marie‐Estelle; Dubois, Sébastien; Kleider, Jean‐Paul Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Density Functional Theory Study on Defect Behavior Related to the Bulk Lifetime of Silicon Crystals for Power Device Application. Issue 10 (4th February 2019) Authors: Tsuchiya, Daiki; Sueoka, Koji; Yamamoto, Hidekazu Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films. Issue 10 (24th January 2019) Authors: Park, Seran; Shin, Hyunsu; Ko, Eunjung; Ko, Dae‐Hong Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Evidence for Molybdenum‐Hydrogen Bonding in p‐Type Silicon upon Annealing under Illumination. Issue 10 (31st October 2018) Authors: Mullins, Jack; Markevich, Vladimir P.; Halsall, Matthew P.; Peaker, Anthony R. Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Imaging Interstitial Iron Concentrations in Gallium‐Doped Silicon Wafers. Issue 10 (7th January 2019) Authors: Post, Regina; Niewelt, Tim; Schön, Jonas; Schindler, Florian; Schubert, Martin C. Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide. Issue 10 (2nd January 2019) Authors: Sreng, Mengkoing; Silva, François; Roca i Cabarrocas, Pere Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon. Issue 10 (11th December 2018) Authors: Kolevatov, Ilia L.; Weiser, Philip M.; Monakhov, Eduard V.; Svensson, Bengt G. Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon. Issue 10 (25th September 2018) Authors: Murin, Leonid I.; Tolkacheva, Ekaterina A.; Lastovskii, Stanislau B.; Markevich, Vladimir P.; Mullins, Jack; Peaker, Anthony R.; Svensson, Bengt G. Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD. Issue 10 (18th December 2018) Authors: Gudovskikh, Alexander S.; Uvarov, Alexander V.; Morozov, Ivan A.; Baranov, Artem I.; Kudryashov, Dmitry A.; Zelentsov, Kirill S.; Jaffré, Alexandre; Le Gall, Sylvain; Darga, Arouna; Brezard‐Oudot, Aurore; Kleider, Jean‐Paul Other Names: Murphy John D. guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 10(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗