1. Experimental and numerical investigation of Poole–Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs. (20th December 2021) Authors: Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro Journal: Semiconductor science and technology Issue: Volume 37:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗