1. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (20th January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Processing Technologies for Advanced Ge Devices. (1st January 2017) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Processing Technologies for Advanced Ge Devices. (5th December 2016) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. The impact of the temperature on In0.53Ga0.47As nTFETs. (2018) Authors: Bordallo, C.; Martino, J. A.; Agopian, P. G. D.; Alian, A.; Mols, Y.; Rooyackers, R.; Vandooren, A.; Verhulst, A.; Mocuta, D.; Lin, D.; Simoen, E.; Claeys, C.; Collaert, N. Journal: Composants nanoélectroniques = Issue: Volume 1(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗