1. C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys. (3rd March 2016) Authors: Mizuno, Tomohisa; Nagamine, Yoshiki; Omata, Yuhsuke; Suzuki, Yuhya; Urayama, Wako; Aoki, Takashi; Sameshima, Toshiyuki Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Crystallization of Amorphous Silicon Thin Films by Microwave Heating. Issue 1666 (3rd November 2014) Authors: Nakamura, Tomohiko; Yoshidomi, Shinya; Hasumi, Masahiko; Sameshima, Toshiyuki; Mizuno, Tomohisa Editors: Stradins, P.; Collins, R.; Finger, F.; Wyrsch, N.; Terakawa, A. Journal: MRS proceedings Issue: Issue 1666:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Experimental study on interface region of two-dimensional Si layers by forming gas annealing. (4th March 2016) Authors: Mizuno, Tomohisa; Suzuki, Yuhya; Kikuchi, Reika; Suzuki, Ayaka; Inoue, Ryohsuke; Yamanaka, Masahiro; Yokoyama, Miki; Nagamine, Yoshiki; Aoki, Takashi; Maeda, Tatsuro Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Group-IV-semiconductor quantum-dots in thermal SiO2 layer fabricated by hot-ion implantation technique: different wavelength photon emissions. (12th February 2021) Authors: Mizuno, Tomohisa; Kanazawa, Rikito; Yamamoto, Kazuhiro; Murakawa, Kohki; Yoshimizu, Kazuma; Tanaka, Midori; Aoki, Takashi; Sameshima, Toshiyuki Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Material structure of two-/three-dimensional Si–C layers fabricated by hot-C+-ion implantation into Si-on-insulator substrate. (8th March 2017) Authors: Mizuno, Tomohisa; Omata, Yuhsuke; Nagamine, Yoshiki; Aoki, Takashi; Sameshima, Toshiyuki Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Minority Carrier Annihilation at Crystalline Silicon Interface in Metal Oxide Semiconductor Structure. Issue 1666 (3rd November 2014) Authors: Furukawa, Jun; Shigeno, Satoshi; Yoshidomi, Shinya; Node, Tomohito; Hasumi, Masahiko; Sameshima, Toshiyuki; Mizuno, Tomohisa Editors: Stradins, P.; Collins, R.; Finger, F.; Wyrsch, N.; Terakawa, A. Journal: MRS proceedings Issue: Issue 1666:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity. (8th March 2018) Authors: Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Passivation of silicon surfaces by heat treatment in liquid water at 110 °C. (16th September 2015) Authors: Nakamura, Tomohiko; Sameshima, Toshiyuki; Hasumi, Masahiko; Mizuno, Tomohisa Journal: Japanese journal of applied physics Issue: Volume 54:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Passivation of Silicon Surfaces by Treatment in Water at 110°C. Issue 1770 (1st June 2015) Authors: Nakamura, Tomohiko; Sameshima, Toshiyuki; Hasumi, Masahiko; Mizuno, Tomohisa Editors: Hekmatshoar, B.; Collins, R.; Holman, Z.; Stradins, P.; Terakawa, A. Journal: MRS proceedings Issue: Issue 1770(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Passivation of Silicon Surfaces by Treatment in Water at 110°C. Issue 1770 (2015) Authors: Nakamura, Tomohiko; Sameshima, Toshiyuki; Hasumi, Masahiko; Mizuno, Tomohisa Editors: Hekmatshoar, B.; Collins, R.; Holman, Z.; Stradins, P.; Terakawa, A. Journal: MRS proceedings Issue: Issue 1770(2015) Page Start: 37 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗