1. A hybrid functional calculation of Tm3+ defects in germanium (Ge). (1st March 2016) Authors: Igumbor, E.; Meyer, W.E. Journal: Materials science in semiconductor processing Issue: Volume 43(2016:Mar.) Page Start: 129 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A hybrid functional calculation of Tm3+ defects in germanium (Ge). (1st March 2016) Authors: Igumbor, E.; Meyer, W.E. Journal: Materials science in semiconductor processing Issue: Volume 43(2016:Mar.) Page Start: 129 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. DLTS characterization of defects in GaN induced by electron beam exposure. (15th June 2017) Authors: Ngoepe, P.N.M.; Meyer, W.E.; Auret, F.D.; Omotoso, E.; Diale, M. Journal: Materials science in semiconductor processing Issue: Volume 64(2017) Page Start: 29 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition. (1st June 2018) Authors: Ahmed, M.A.M; Mwankemwa, B.S.; Carleschi, E.; Doyle, B.P.; Meyer, W.E.; Nel, J.M. Journal: Materials science in semiconductor processing Issue: Volume 79(2018) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC. (15th August 2016) Authors: Omotoso, E.; Meyer, W.E.; Coelho, S.M.M.; Diale, M.; Ngoepe, P.N.M.; Auret, F.D. Journal: Materials science in semiconductor processing Issue: Volume 51(2016:Aug.) Page Start: 20 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electronic properties and defect levels induced by n/p-type defect-complexes in Ge. (1st November 2022) Authors: Igumbor, E.; Olaniyan, O.; Dongho-Nguimdo, G.M.; Mapasha, R.E.; Ahmad, S.; Omotoso, E.; Meyer, W.E. Journal: Materials science in semiconductor processing Issue: Volume 150(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts. (15th August 2019) Authors: Taghizadeh, F.; Janse van Rensburg, P.J.; Ostvar, K.; Meyer, W.E.; Auret, F.D. Journal: Materials science in semiconductor processing Issue: Volume 99(2019) Page Start: 23 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study. (January 2019) Authors: Igumbor, E.; Olaniyan, O.; Mapasha, R.E.; Danga, H.T.; Omotoso, E.; Meyer, W.E. Journal: Materials science in semiconductor processing Issue: Volume 89(2019) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Laplace DLTS study of defects introduced in GaAs during sputter deposition of Au Schottky contacts. (December 2022) Authors: Taghizadeh, F.; Janse van Rensburg, P.J.; Meyer, W.E.; Auret, F.D. Journal: Materials science in semiconductor processing Issue: Volume 152(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC. (July 2020) Authors: Igumbor, E.; Dongho-Nguimdo, G.M.; Mapasha, R.E.; Omotoso, E.; Meyer, W.E. Journal: Journal of physics and chemistry of solids Issue: Volume 142(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗