1. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters. (May 2018) Authors: Cristoloveanu, S.; Lee, K.H.; Parihar, M.S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J.-Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T. Journal: Solid-state electronics Issue: Volume 143(2018) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs. (February 2023) Authors: Kom Kammeugne, R.; Theodorou, C.; Leroux, C.; Vauche, L.; Mescot, X.; Gwoziecki, R.; Becu, S.; Charles, M.; Bano, E.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 200(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications. (July 2022) Authors: Lacord, J.; Tcheme Wakam, F.; Chalupa, Z.; Hartmann, J.-M.; Besson, P.; Loup, V.; Vizioz, C.; Brevard, L.; Aussenac, F.; Mescot, X.; Lee, K.; Bawedin, M. Journal: Solid-state electronics Issue: Volume 193(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗