Author/Creator: Medjdoub, F. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Medjdoub, F.

1. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. (September 2019)

Authors:: Borga, M.; Meneghini, M.; Benazzi, D.; Canato, E.; Püsche, R.; Derluyn, J.; Abid, I.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Journal:: Microelectronics and reliability
Issue:: Volume 100/101(2019)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. (September 2017)

Authors:: De Santi, C.; Meneghini, M.; Caria, A.; Dogmus, E.; Zegaoui, M.; Medjdoub, F.; Zanoni, E.; Meneghesso, G.
Journal:: Microelectronics and reliability
Issue:: Volume 76/77(2017)
Page Start:: 575
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV. Issue 19 (4th September 2015)

Authors:: Herbecq, N.; Roch‐Jeune, I.; Linge, A.; Grimbert, B.; Zegaoui, M.; Medjdoub, F.
Journal:: Electronics letters
Issue:: Volume 51:Issue 19(2015)
Page Start:: 1532
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

4. High PAE high reliability AlN/GaN double heterostructure. (November 2015)

Authors:: Medjdoub, F.; Zegaoui, M.; Linge, A.; Grimbert, B.; Silvestri, R.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Journal:: Solid-state electronics
Issue:: Volume 113(2015)
Page Start:: 49
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. (September 2019)

Authors:: Rzin, M.; Meneghini, M.; Rampazzo, F.; Zhan, V. Gao; De Santi, C.; Kabouche, R.; Zegaoui, M.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Journal:: Microelectronics and reliability
Issue:: Volume 100/101(2019)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

6. Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism. (January 2016)

Authors:: Sahoo, A.K.; Subramani, N.K.; Nallatamby, J.C.; Sylvain, L.; Loyez, C.; Quere, R.; Medjdoub, F.
Journal:: Solid-state electronics
Issue:: Volume 115 Part A(2016)
Page Start:: 12
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

7. Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3. (December 2020)

Authors:: Chikoidze, E.; Tchelidze, T.; Sartel, C.; Chi, Z.; Kabouche, R.; Madaci, I.; Rubio, C.; Mohamed, H.; Sallet, V.; Medjdoub, F.; Perez-Tomas, A.; Dumont, Y.
Journal:: Materials today physics
Issue:: Volume 15(2020)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗