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You searched for: Author/Creator McCartney, C.L.Limit your search
- McCartney, C.L. [remove] 2
- 621.381 2
- Electronics -- Periodicals 2
- DRAM chips -- field effect transistors -- ferroelectric semiconductors -- ferroelectric capacitors -- radiation hardening (electronics) 1
- MFSFET two‐bit 1T1C DRAM memory design -- 1‐transistor 1‐capacitor dynamic random access memory cell -- metal‐ferroelectric‐semiconductor field‐effect transistor -- ferroelectric layer polarisation -- positive polarisation -- negative polarisation -- nonvolatile long‐term storage -- power consumption -- radiation hardening -- write and read operating cycle -- channel resistance measurement -- word length 2 bit 1
- ferroelectric transistor -- low‐power latch -- nonvolatile latch circuit -- metal‐ferroelectric‐semiconductor field‐effect transistor -- inverter stages -- hysteresis properties -- polarisation state -- constant power supply -- radiation hardening -- space applications 1
- low‐power electronics -- flip‐flops -- invertors -- field effect transistors -- radiation hardening (electronics) 1