Implementation of low‐power, non‐volatile latch utilising ferroelectric transistor. Issue 23 (1st November 2015)

• Record Type: Journal Article
• Authors: Mitchell, C.; Hunt, M.R.; McCartney, C.L.; Ho, F.D.
• Is Part Of: Electronics letters. Volume 51:Issue 23(2015)
• Page Start: 1884
• Page End: 1886
• Publication Date: 2015-11-01
• Subjects: low‐power electronics -- flip‐flops -- invertors -- field effect transistors -- radiation hardening (electronics); ferroelectric transistor -- low‐power latch -- nonvolatile latch circuit -- metal‐ferroelectric‐semiconductor field‐effect transistor -- inverter stages -- hysteresis properties -- polarisation state -- constant power supply -- radiation hardening -- space applications; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2927
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The implementation of a non‐volatile latch circuit developed with a metal–ferroelectric–semiconductor field‐effect transistor is presented. The circuit contains two inverter stages in order to create and rectify the desired waveform. The hysteresis properties of the ferroelectric transistor allow it to retain a polarisation state after an applied voltage at the gate is removed. This circuit has reduced power requirements because a constant power supply is not needed at all times; instead, a voltage is only needed at the gate of the ferroelectric transistor when storing a value, and the other components only need a power supply when reading the stored value from the circuit. The circuit is less complex than similar non‐volatile latches because only a single ferroelectric transistor is used and fewer overall transistors may be used. It also has the advantage of being radiation‐hardened for space applications.