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1. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019). Issue 4 (19th February 2019)

10. Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017). Issue 8 (8th August 2017)