Author/Creator: Mawst, L J - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Mawst, L J

1. Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1−xBix explored by atom probe tomography and HAADF-STEM. (4th May 2017)

Authors:: Wood, Adam W; Chen, Weixin; Kim, Honghyuk; Guan, Yingxin; Forghani, K; Anand, A; Kuech, T F; Mawst, L J; Babcock, S E
Journal:: Nanotechnology
Issue:: Volume 28:Number 21(2017)
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Record Type:: Journal Article
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2. Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPy quantum wells for laser applications. (7th July 2015)

Authors:: Kim, H; Forghani, K; Guan, Y; Luo, G; Anand, A; Morgan, D; Kuech, T F; Mawst, L J; Lingley, Z R; Foran, B J; Sin, Y
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 9(2015:Sep.)
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Record Type:: Journal Article
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3. Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPy quantum wells for laser applications. (September 2015)

Authors:: Kim, H; Forghani, K; Guan, Y; Luo, G; Anand, A; Morgan, D; Kuech, T F; Mawst, L J; Lingley, Z R; Foran, B J; Sin, Y
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 9(2015:Sep.)
Page Start:: 3874
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗