1. (Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication. (8th September 2020) Authors: Das, Hrishikesh; Sunkari, Swapna; Justice, Joshua; Malousek, Roman; Chochol, Jan; Wada, Ryota; Kuroi, Takashi Journal: ECS transactions Issue: Volume 98:Number 6(2020) Page Start: 119 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗