(Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication. (8th September 2020)

• Record Type: Journal Article
• Authors: Das, Hrishikesh; Sunkari, Swapna; Justice, Joshua; Malousek, Roman; Chochol, Jan; Wada, Ryota; Kuroi, Takashi
• Is Part Of: ECS transactions. Volume 98:Number 6(2020)
• Page Start: 119
• Page End: 124
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09806.0119ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This work focuses on evaluating and demonstrating channeled p-type and n-type implantations in silicon carbide in a repeatable mass-production environment. Range increase of about 3X is observed using channeled conditions as opposed to normal incident conditions for both Aluminum and Phosphorous. The various advantages enabled by this technology for advanced device designs are highlighted. Super-junction devices targeting the same voltage range can be fabricated using one or two lesser epitaxial regrowth layers.