1. Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au+ ions. (2nd March 2018) Authors: Macková, A.; Malinskyˊ, P.; Jágerová, A.; Sofer, Z.; Sedmidubský, D.; Klímová, K.; Böttger, R.; Akhmadaliev, S. Journal: Surface and interface analysis Issue: Volume 50:Number 11(2018) Page Start: 1099 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗