Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au+ ions. (2nd March 2018)

• Record Type: Journal Article
• Authors: Macková, A.; Malinskyˊ, P.; Jágerová, A.; Sofer, Z.; Sedmidubský, D.; Klímová, K.; Böttger, R.; Akhmadaliev, S.
• Is Part Of: Surface and interface analysis. Volume 50:Number 11(2018)
• Page Start: 1099
• Page End: 1105
• Publication Date: 2018-03-02
• Subjects: damage accumulation in GaN -- RBS channelling in ion‐modified GaN -- structure modification in c‐plane and a‐plane GaN; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6403
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : c‐plane (0001) and a‐plane (11‐20) gallium nitride (GaN) epitaxial layers were grown by Metal organic Vapour Phase epitaxy (MOVPE) on sapphire and subsequently implanted with 400‐keV and 5‐MeV Au + ions using fluences 5 × 10 14 to 5 × 10 15 cm −2 . The shallow Au depth profiling was accomplished by Rutherford backscattering spectrometry. The structural changes during implantation and subsequent annealing were characterised by Rutherford backscattering spectrometry channelling and Raman spectroscopy. The interplay between nuclear and electronic stopping, influencing defect accumulation, was monitored and discussed depending on GaN orientation. Post‐implantation annealing induced a structural reorganisation of the GaN structure depending on the ion‐implantation fluence, ion energy, and on the crystallographic orientation.