1. A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures. (August 2022) Authors: Piotrowicz, C.; Mohamad, B.; Rrustemi, B.; Malbert, N.; Jaud, M.A.; Vandendaele, W.; Charles, M.; Gwoziecki, R. Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG). (March 2023) Authors: Piotrowicz, C.; Mohamad, B.; Malbert, N.; Jaud, M.-A.; Vandendaele, W.; Charles, M.; Gwoziecki, R. Journal: Solid-state electronics Issue: Volume 201(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Issue 9 (August 2015) Authors: Rzin, M.; Labat, N.; Malbert, N.; Curutchet, A.; Brunel, L.; Lambert, B. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1672 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests. (September 2019) Authors: Magnier, F.; Lambert, B.; Chang, C.; Curutchet, A.; Labat, N.; Malbert, N. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016) Authors: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 594 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016) Authors: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 594 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. (September 2017) Authors: Mukherjee, K.; Darracq, F.; Curutchet, A.; Malbert, N.; Labat, N. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 350 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗