Author/Creator: Malbert, N. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Malbert, N.

1. A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures. (August 2022)

Authors:: Piotrowicz, C.; Mohamad, B.; Rrustemi, B.; Malbert, N.; Jaud, M.A.; Vandendaele, W.; Charles, M.; Gwoziecki, R.
Journal:: Solid-state electronics
Issue:: Volume 194(2022)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG). (March 2023)

Authors:: Piotrowicz, C.; Mohamad, B.; Malbert, N.; Jaud, M.-A.; Vandendaele, W.; Charles, M.; Gwoziecki, R.
Journal:: Solid-state electronics
Issue:: Volume 201(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Issue 9 (August 2015)

Authors:: Rzin, M.; Labat, N.; Malbert, N.; Curutchet, A.; Brunel, L.; Lambert, B.
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 9/10(2015)
Page Start:: 1672
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

4. Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests. (September 2019)

Authors:: Magnier, F.; Lambert, B.; Chang, C.; Curutchet, A.; Labat, N.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 100/101(2019)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016)

Authors:: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 594
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

6. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016)

Authors:: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 594
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

7. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. (September 2017)

Authors:: Mukherjee, K.; Darracq, F.; Curutchet, A.; Malbert, N.; Labat, N.
Journal:: Microelectronics and reliability
Issue:: Volume 76/77(2017)
Page Start:: 350
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗