Author/Creator: Makiyama, Kozo - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Makiyama, Kozo

1. Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3. (11th May 2017)

Authors:: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Okamoto, Naoya; Kaneki, Shota; Nishiguchi, Kenya; Hara, Naoki; Hashizume, Tamotsu
Journal:: Applied physics express
Issue:: Volume 10:Number 6(2017)
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Record Type:: Journal Article
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2. High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers. Issue 4 (20th February 2023)

Authors:: Kotani, Junji; Makiyama, Kozo; Ohki, Toshihiro; Ozaki, Shiro; Okamoto, Naoya; Minoura, Yuichi; Sato, Masaru; Nakamura, Norikazu; Miyamoto, Yasuyuki
Journal:: Electronics letters
Issue:: Volume 59:Issue 4(2023)
Page Start:: n/a
Record Type:: Journal Article
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3. Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors. (13th January 2017)

Authors:: Takahashi, Tsuyoshi; Kawano, Yoichi; Makiyama, Kozo; Shiba, Shoichi; Sato, Masaru; Nakasha, Yasuhiro; Hara, Naoki
Journal:: Applied physics express
Issue:: Volume 10:Number 2(2017)
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Record Type:: Journal Article
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4. Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane‐based low‐k insulator films. Issue 5 (29th December 2014)

Authors:: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Masuda, Satoshi; Joshin, Kazukiyo
Journal:: Physica status solidi
Issue:: Volume 212:Issue 5(2015:May)
Page Start:: 1153
Record Type:: Journal Article
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5. Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor. Issue 5 (20th December 2015)

Authors:: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Joshin, Kazukiyo
Journal:: Physica status solidi
Issue:: Volume 213:Issue 5(2016:May)
Page Start:: 1259
Record Type:: Journal Article
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6. Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs. (9th April 2020)

Authors:: Kamada, Yoichi; Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Ohki, Toshihiro; Minoura, Yuichi; Kumazaki, Yusuke; Okamoto, Naoya; Makiyama, Kozo; Nakamura, Norikazu; Kotani, Junji
Journal:: Japanese journal of applied physics
Issue:: Volume 59:Number 4(2020)
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Record Type:: Journal Article
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