Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors. (13th January 2017)

• Record Type: Journal Article
• Authors: Takahashi, Tsuyoshi; Kawano, Yoichi; Makiyama, Kozo; Shiba, Shoichi; Sato, Masaru; Nakasha, Yasuhiro; Hara, Naoki
• Is Part Of: Applied physics express. Volume 10:Number 2(2017)
• Publication Date: 2017-01-13
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.024102
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A maximum frequency of oscillation ( f max ) of 1.3 THz was achieved using an extended drain-side recess structure of InAlAs/InGaAs high-electron-mobility transistors (HEMTs), although the gate length was relatively long at 75 nm. The high f max was improved by reducing the drain output conductance ( g d ). The use of an asymmetric gate recess structure and double-side doping above and below a channel region were effective in reducing g d . Further improvements in transconductance ( g m ) and g d were achieved by reducing the distance between the source and gate electrodes.