Author/Creator: Maaref, Hassen - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Maaref, Hassen

1. Adaptive dynamic multi‐hop technique for clustering protocol in wireless sensor networks assisted‐Internet of Things applications. Issue 1 (26th November 2021)

Authors:: Nasri, Mohsen; Lamiri, Ahmed; Maaref, Hassen; Mghaieth, Ridha
Journal:: IET networks
Issue:: Volume 11:Issue 1(2022)
Page Start:: 27
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy. (December 2017)

Authors:: Aouassa, Mansour; Jadli, Imen; Hassayoun, Latifa Slimen; Maaref, Hassen; Panczer, Gerard; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle
Journal:: Superlattices and microstructures
Issue:: Volume 112(2017)
Page Start:: 493
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Carrier localization in In0.21Ga0.79As/GaAs multiple quantum wells: A modified Pässler model for the S-shaped temperature dependence of photoluminescence energy. (February 2017)

Authors:: Fraj, Ibtissem; Hidouri, Tarek; Saidi, Faouzi; Maaref, Hassen
Journal:: Superlattices and microstructures
Issue:: Volume 102(2017)
Page Start:: 351
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

4. Effects of current transportation and deep traps on leakage current and capacitance hysteresis of AlGaN/GaN HEMT. (15th August 2020)

Authors:: Saadaoui, Salah; Fathallah, Olfa; Maaref, Hassen
Journal:: Materials science in semiconductor processing
Issue:: Volume 115(2020)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Effects of gate length on GaN HEMT performance at room temperature. (February 2022)

Authors:: Saadaoui, Salah; Fathallah, Olfa; Maaref, Hassen
Journal:: Journal of physics and chemistry of solids
Issue:: Volume 161(2022)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

6. Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of current‐voltage. (31st May 2021)

Authors:: Helal, Hicham; Benamara, Zineb; Arbia, Marwa Ben; Rabehi, Abdelaziz; Chaouche, Abdallah Chabane; Maaref, Hassen
Other Names:: Yan Su guestEditor.; Liu Yang guestEditor.
Journal:: International journal of numerical modelling
Issue:: Volume 34:Number 6(2021)
Page Start:: n/a
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

7. Energy‐efficient fuzzy logic‐based cross‐layer hierarchical routing protocol for wireless Internet‐of‐Things sensor networks. (10th April 2021)

Authors:: Nasri, Mohsen; Helali, Abdelhamid; Maaref, Hassen
Journal:: International journal of communication systems
Issue:: Volume 34:Number 9(2021)
Page Start:: n/a
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

8. Evolution of InAs/GaAs QDs Size with the Growth Rate: A Numerical Investigation. (27th August 2015)

Authors:: Ilahi, Bouraoui; Souaf, Manel; Baira, Mourad; Alrashdi, Jawaher; Sfaxi, Larbi; Alhazaa, Abdulaziz; Maaref, Hassen
Other Names:: Morais Paulo Cesar Academic Editor.
Journal:: Journal of nanomaterials
Issue:: Volume 2015(2015)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

9. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation. (January 2023)

Authors:: Ben Arbia, Marwa; Demir, Ilkay; Kaur, Navpreet; Saidi, Faouzi; Zappa, Dario; Comini, Elisabetta; Altuntaş, Ismail; Maaref, Hassen
Journal:: Materials science in semiconductor processing
Issue:: Volume 153(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

10. Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor. (August 2021)

Authors:: Saadaoui, Salah; Fathallah, Olfa; Maaref, Hassen
Journal:: Superlattices and microstructures
Issue:: Volume 156(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗