1. Platinum-assisted post deposition annealing of the n-Ge/Y2O3 interface. (13th June 2016) Authors: Zimmermann, C; Bethge, O; Lutzer, B; Bertagnolli, E Journal: Semiconductor science and technology Issue: Volume 31:Number 7(2016:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗