1. InAlN/AlN/GaN heterostructures for high electron mobility transistors. (August 2016) Authors: Usov, S O; Sakharov, A V; Tsatsulnikov, A F; Lundin, V W; Zavarin, E E; Nikolaev, A E; Yagovkina, M A; Zemlyakov, V E; Egorkin, V I; Ustinov, V M Journal: Journal of physics Issue: Volume 741(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗