InAlN/AlN/GaN heterostructures for high electron mobility transistors. (August 2016)

• Record Type: Journal Article
• Authors: Usov, S O; Sakharov, A V; Tsatsulnikov, A F; Lundin, V W; Zavarin, E E; Nikolaev, A E; Yagovkina, M A; Zemlyakov, V E; Egorkin, V I; Ustinov, V M
• Is Part Of: Journal of physics. Volume 741(2016)
• Publication Date: 2016-08
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/741/1/012164
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The results of development of InAlN/AlN/GaN heterostructures, grown on sapphire substrates by metal-organic chemical vapour deposition, and high electron mobility transistors (HEMTs) based on them are presented. The dependencies of the InAlN/AlN/GaN heterostructure properties on epitaxial growth conditions were investigated. The optimal indium content and InAlN barrier layer thicknesses of the heterostructures for HEMT s were determined. The possibility to improve the characteristics of HEMTs by in-situ passivation by Si3 N4 thin protective layer deposited in the same epitaxial process was demonstrated. The InAlN/AlN/GaN heterostructure grown on sapphire substrate with diameter of 100 mm were obtained with sufficiently uniform distribution of sheet resistance. The HEMTs with saturation current of 1600 mA/mm and transconductance of 230 mS/mm are demonstrated.