1. Effects of erbium doping of indium tin oxide electrode in resistive random access memory. (18th February 2016) Authors: Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. Journal: Applied physics express Issue: Volume 9:Number 3(2016:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates. (18th October 2017) Authors: Lin, Yu-Chiao; Lo, Ikai; Shih, Hui-Chun; Chou, Mitch M. C.; Schaadt, D. M. Other Names: Wu Guosong Academic Editor. Journal: Scanning Issue: Volume 2017(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory. (28th November 2016) Authors: Su, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. Journal: Japanese journal of applied physics Issue: Volume 56:Number 1(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗