Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates. (18th October 2017)

• Record Type: Journal Article
• Authors: Lin, Yu-Chiao; Lo, Ikai; Shih, Hui-Chun; Chou, Mitch M. C.; Schaadt, D. M.
• Other Names: Wu Guosong Academic Editor.
• Is Part Of: Scanning. Volume 2017(2017)
• Publication Date: 2017-10-18
• Subjects: Scanning electron microscopy -- Periodicals; 502.825
• DOI: 10.1155/2017/2362084
• Languages: English
• ISSNs: 0161-0457

Abstract

Abstract : M -plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth ofM -plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along[ 112 - 0] . According to high-resolution X-ray diffraction analysis, Li5 GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5 GaO4 would influence the surface morphology and crystal quality.