1. Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted. (1st November 2022) Authors: Chang, Chih-Yao; Shen, Yao-Luen; Tang, Shun-Wei; Wu, Tian-Li; Kuo, Wei-Hung; Lin, Suh-Fang; Wu, Yuh-Renn; Huang, Chih-Fang Journal: Applied physics express Issue: Volume 15:Number 11(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗