Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted. (1st November 2022)

• Record Type: Journal Article
• Authors: Chang, Chih-Yao; Shen, Yao-Luen; Tang, Shun-Wei; Wu, Tian-Li; Kuo, Wei-Hung; Lin, Suh-Fang; Wu, Yuh-Renn; Huang, Chih-Fang
• Is Part Of: Applied physics express. Volume 15:Number 11(2022)
• Publication Date: 2022-11-01
• Subjects: GaN -- high electron mobility transistor (HEMT) -- p-GaN etching; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac9c45
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: In this study, a 10 nm u-GaN etching buffer layer was designed and inserted into the standard p-GaN/AlGaN/GaN high electron mobility transistor structure to improve the p-GaN etching process. The experimental result shows that the device with the u-GaN layer can avoid the over-etched issue, further improving the uniformity of the etching profile and the ON-resistance of the devices. The simulation result indicates that the drain current would slightly increase due to reduced conduction band raising when the u-GaN layer is inserted. In sum, the process uniformity can improve when the u-GaN layer is inserted and in the meantime, excellent device characteristics are maintained.