1. Investigation of Electrical Characteristics on 25-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate Dielectric. (1st January 2017) Authors: Lin, M. H.; Lin, Y. C.; Lin, Y. S.; Sun, W. J.; Chen, S. H.; Chiu, Y. C.; Cheng, C. H.; Chang, C. Y. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 4(2017) Page Start: Q58 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Investigation of Electrical Characteristics on 25-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate Dielectric. (23rd February 2017) Authors: Lin, M. H.; Lin, Y. C.; Lin, Y. S.; Sun, W. J.; Chen, S. H.; Chiu, Y. C.; Cheng, C. H.; Chang, C. Y. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 4(2017) Page Start: Q58 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack. (1st January 2018) Authors: Lin, M. H.; Fan, C. C.; Hsu, H. H.; Liu, C.; Chen, K. M.; Cheng, C. H.; Chang, C. Y. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 11(2018) Page Start: P640 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack. (27th October 2018) Authors: Lin, M. H.; Fan, C. C.; Hsu, H. H.; Liu, C.; Chen, K. M.; Cheng, C. H.; Chang, C. Y. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 11(2018) Page Start: P640 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗