Investigation of Electrical Characteristics on 25-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate Dielectric. (1st January 2017)

• Record Type: Journal Article
• Authors: Lin, M. H.; Lin, Y. C.; Lin, Y. S.; Sun, W. J.; Chen, S. H.; Chiu, Y. C.; Cheng, C. H.; Chang, C. Y.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 4(2017)
• Page Start: Q58
• Page End: Q62
• Publication Date: 2017-01-01
• Subjects: FinFET -- InGaAs; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0261704jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We investigated an N-type III–V FinFET with a 25-nm In0.53 Ga0.47 As channel and a 300-nm In0.52 Al0.48 As barrier layer on an InP substrate. The In0.52 Al0.48 As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2 O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.