1. Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature. (29th January 2023) Authors: Lan, Jun; Li, Zhixiong; Chen, Zhenjie; Zhu, Quanzhou; Wang, Wenhui; Zaheer, Muhammad; Lu, Jiqing; Liang, Jinxuan; Shen, Mei; Chen, Peng; Chen, Kai; Zhang, Guobiao; Wang, Zhongrui; Zhou, Feichi; Lin, Longyang; Li, Yida Journal: Advanced Electronic Materials Issue: Volume 9:Number 3(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗