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Author/Creator Lin, Longyang

2. Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature. (29th January 2023)

Authors:
Lan, Jun; Li, Zhixiong; Chen, Zhenjie; Zhu, Quanzhou; Wang, Wenhui; Zaheer, Muhammad; Lu, Jiqing; Liang, Jinxuan; Shen, Mei; Chen, Peng; Chen, Kai; Zhang, Guobiao; Wang, Zhongrui; Zhou, Feichi; Lin, Longyang; Li, Yida
Journal:
Advanced Electronic Materials
Issue:
Volume 9:Number 3(2023)
Page Start:
n/a
Record Type:
Journal Article
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