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2. Contribution of enhanced ionization to the optoelectronic properties of p-type NiO films deposited by high power impulse magnetron sputtering. Issue 16 (December 2019)

3. Dielectric properties and reliability enhancement of atomic layer deposited thin films by in situ atomic layer substrate biasing. Issue 37 (7th September 2020)

9. Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. (April 2020)