Author/Creator: Li, Binhong - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Li, Binhong

1. A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes. (November 2020)

Authors:: Wang, Zhian; Li, Binhong; Wu, Jianfei; Zhao, Wenxin; Li, Bo; Liu, Hainan; Guan, Chongjie; Feng, Shiwei; Luo, Jiajun; Ye, Tianchun
Journal:: Microelectronics and reliability
Issue:: Volume 114(2020)
Page Start:
Record Type:: Journal Article
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2. A novel ultra‐wideband antipodal Vivaldi antenna with trapezoidal dielectric substrate. Issue 2 (10th January 2018)

Authors:: Wan, Fayu; Chen, Jun; Li, Binhong
Journal:: Microwave and optical technology letters
Issue:: Volume 60:Issue 2(2018:Feb.)
Page Start:: 449
Record Type:: Journal Article
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3. Content-based image retrieval using color vector angle difference histogram. (3rd April 2017)

Authors:: Sun, Huadong; Zhao, Zhijie; Tian, Qin; Jin, Xuesong; Zhang, Lizhi; Li, Binhong
Journal:: Journal of the Chinese Institute of Engineers
Issue:: Volume 40:Number 3(2017)
Page Start:: 246
Record Type:: Journal Article
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4. Effect of secondary discharge on the repeatability of contact discharge method. Issue 23 (1st November 2017)

Authors:: Wan, Fayu; Wang, Xiangwei; Li, Binhong
Journal:: Electronics letters
Issue:: Volume 53:Issue 23(2017)
Page Start:: 1518
Record Type:: Journal Article
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5. Essential Effects on the Mobility Extraction Reliability for Organic Transistors. (30th August 2018)

Authors:: Xu, Yong; Sun, Huabin; Liu, Ao; Zhu, Huihui; Li, Binhong; Minari, Takeo; Balestra, Francis; Ghibaudo, Gerard; Noh, Yong‐Young
Journal:: Advanced functional materials
Issue:: Volume 28:Number 42(2018)
Page Start:: n/a
Record Type:: Journal Article
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6. Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature. (November 2020)

Authors:: Zhang, Junjun; Liu, Fanyu; Li, Bo; Li, Binhong; Huang, Yang; Yang, Can; Wang, Guoqing; Wang, Rongwei; Luo, Jiajun; Han, Zhengsheng
Journal:: Microelectronics and reliability
Issue:: Volume 114(2020)
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Record Type:: Journal Article
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7. Single-event burnout hardening of planar power MOSFET with partially widened trench source *Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169). (March 2018)

Authors:: Lu, Jiang; Liu, Hainan; Cai, Xiaowu; Luo, Jiajun; Li, Bo; Li, Binhong; Wang, Lixin; Han, Zhengsheng
Journal:: Journal of semiconductors
Issue:: Volume 39:Number 3(2018:Mar.)
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Record Type:: Journal Article
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