1. Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1. (3rd September 2020) Authors: Gaevski, Mikhail; Mollah, Shahab; Hussain, Kamal; Letton, Joshua; Mamun, Abdullah; Jewel, Mohi Uddin; Chandrashekhar, MVS; Simin, Grigory; Khan, Asif Journal: Applied physics express Issue: Volume 13:Number 9(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗