Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1. (3rd September 2020)

• Record Type: Journal Article
• Authors: Gaevski, Mikhail; Mollah, Shahab; Hussain, Kamal; Letton, Joshua; Mamun, Abdullah; Jewel, Mohi Uddin; Chandrashekhar, MVS; Simin, Grigory; Khan, Asif
• Is Part Of: Applied physics express. Volume 13:Number 9(2020)
• Publication Date: 2020-09-03
• Subjects: UWBG AlGaN MOSHFET -- Perforated channel -- RC-constant -- Self-heating -- Thermal resistance; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abb1c8
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report an Ultrawide Bandgap Al0.4 Ga0.6 N channel metal-oxide-semiconductor heterostructure field effect transistor with drain currents exceeding 1.33 A mm −1 (pulse) and 1.17 A mm −1 (DC), around a 2-fold increase over past reports. This increase was achieved by incorporating a hybrid barrier layer consisting of an AlN spacer, n -doped Al0.6 Ga0.4 N barrier and a thin reverse graded Al x Ga1– x N ( x from 0.60 to 0.30) cap layer. To enhance current spreading, a "perforated" channel layout comprising of narrow channel sections separated by current blocking islands was used. A composite ALD deposited ZrO2 /Al2 O3 film was used as gate dielectric. A breakdown field above 2 MV cm −1 was measured.